Motivation and Goals

Ef is developed with a particular application in mind: simulation and optimization of certain type of ion source - electron beam ion source, EBIS. Such sources are commonly used to produce beams of highly charged ions for applications in particle physics, medicine and surface modification. Their principle of operation employs an electrostatic ion trap to hold the ions while ionizing them to desired charge state with an electron beam.

Due to high number of particles and long time duration to simulate, such problem is computationally demanding and requires fine control over details of simulation algorithm to achieve acceptable balance between accuracy and computational time. Parallelization is mandatory to accomplish simulation in reasonable amount of time. Integration with CAD systems is highly desirable to simplify geometry specification.

Those requirements have influenced general design goals of the program:

1. Focus on simulation of low-energy charged particle beam devices: ion sources, electron guns, etc. Current goal is simulation of electron beam ion source.
2. Detailed control over simulation algorithm. This is essential for choosing right balance between accuracy and speed of modeling.
3. Support for parallel execution (both CPU and GPU).
4. Integration with CAD systems to simplify device geometry specification and data analysis.
5. Source code is free and open, available for modifications and redistribution.